In addition to the negative effect on industry, it also affects the decisions made by funding agencies, program managers and others who influence research direction in academic and government labs. “But the impact that misreporting has on the field cannot be overstated. Inaccuracies in reporting are “not necessarily intentional,” said Franklin, the Addy Professor of Electrical and Computer Engineering at Duke. So it is often very difficult to evaluate the significance of a reported result, and it is hard to tell whether the results are biased or incomplete.” “There are no uniform guidelines or metrics about how to measure and report a particular parameter. “At present, each group frequently has its own techniques and measurement methods,” Cheng said. The research community at work on emerging FET designs includes physicists, materials scientists, chemists, electrical engineers and more - each approaching the subject a bit differently. The paper provides specific criteria for evaluating and describing each of eight key parameters critical to emerging designs for field-effect transistors (see illustration). They and more than a dozen colleagues from industry, academia, and government labs describe their recommendations in an article published today in Nature Electronics. Richter, former NIST associate Zhihui Cheng(now at Intel), and Aaron Franklin of Duke University are leading an effort to create and promote guidelines for uniform test methods and reporting standards. Given the enormous cost of adopting design innovations, the industry can’t afford to make a mistake. But the industry is getting terribly frustrated, they tell us, because they see a promising piece of information in one publication and another promising piece in another publication, but they’re incompatible. “They want to know exactly what to make and how to make it. “Industry is trying to determine the right materials and designs to use,” said Curt Richter, a physicist at the National Institute of Standards and Technology (NIST) and a co-author of the new article. This problem and possible solutions are outlined in an article published today by an international group of leading experts on semiconductor devices When deciding how to direct billions of funding dollars for next-generation transistors, investors will base many of their decisions on published research results.īut a dismaying amount of research on FETs currently suffers from inconsistent reporting and benchmarking of results, increasing risks of misleading conclusions and inaccurate claims that set false expectations for the field. ![]() To continue making smartphones, laptops, and other devices more powerful and energy efficient, industry is intensely focused on identifying promising next-generation designs and materials for the principal building blocks of modern electronics: the tiny electrical on-off switches known as field-effect transistors (FETs).
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